bc856t series bc857t series surface mount pnp silicon transistor description: the central semiconductor bc856t and bc857t series types are pnp silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. marking code: see marking code table on following page maximum ratings : (t a =25c) symbol bc857t bc856t units collector-base voltage v cbo 50 80 v collector-emitter voltage v ceo 45 65 v emitter-base voltage v ebo 5.0 v continuous collector current i c 100 ma peak collector current i cm 200 ma peak base current i bm 100 ma power dissipation p d 250 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 500 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i cbo v cb =30v 15 na i cbo v cb =30v, t a =150c 5.0 a i ebo v eb =5.0v 100 na bv cbo i c =10a (bc857t) 50 v bv cbo i c =10a (bc856t) 80 v bv ceo i c =10ma (bc857t) 45 v bv ceo i c =10ma (bc856t) 65 v bv ebo i e =10a 5.0 v v ce(sat) i c =10ma, i b =0.5ma 0.20 v v ce(sat) i c =100ma, i b =5.0ma 0.40 v v be(on) i c =2.0ma, v ce =5.0v 0.58 0.70 v v be(on) i c =10ma, v ce =5.0v 0.77 v f t v ce =5.0v, i c =10ma, f=100mhz 100 mhz c c v cb =10v, i e =0, f=1.0mhz 2.5 pf c e v eb =0.5v, i c =0, f=1.0mhz 10 pf nf v ce =5.0v, i c =200a, r s =2.0k , f=1.0khz, bw=200hz 10 db bc856at bc856bt bc857at BC857BT bc857ct min max min max min max h fe v ce =5.0v, i c =2.0ma 125 250 220 475 420 800 sot-523 case r1 (20-november 2009) www.centralsemi.com
bc856t series bc857t series surface mount pnp silicon transistor sot-523 case - mechanical outline lead code: 1) base 2) emitter 3) collector device marking code bc856at gt6 bc856bt gt7 bc857at gt8 BC857BT gt9 bc857ct gt0 www.centralsemi.com r1 (20-november 2009)
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